IEEE Transactions on Very Large Scale Integration (VLSI) Systems
10.1109/TVLSI.2019.2919104
2019
A Half-Select Disturb-Free 11T SRAM Cell With Built-In Write/Read-Assist Scheme for Ultralow-Voltage Operations
He, Yajuan; Zhang, Jiubai; Wu, Xiaoqing; Si, Xin; Zhen, Shaowei; Zhang, Bo
سوال امنیتی
